ECH8601M-TL-H-P
Home
Category
FET, MOSFET
ECH8601M-TL-H-P
The pictures are for reference only
like

ECH8601M-TL-H-P

Brand:ON
Model:ECH8601M-TL-H-P
stock:10219
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR
series -
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing 8-SMD,feedthrough
Warehouse China/Hong Kong
quality Original genuine
Power - maximum -
FET Type 2 N Channel(two)Co leakage
Drain source voltage (Vdss) 24V
Current at 25 ° C - continuous drain (Id) 8A(Ta)
On resistance (maximum) for different Ids and Vgs 23 mΩ @ 4A,4.5V
Vgs (th) (maximum) for different Ids 1.3V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 7.5nC @ 4.5V
Input capacitance at different Vds (Ciss) (maximum) -
FET function Logic level gate,2.5V drive
Common problem
Offer
Offer Table
Model
Num
Company
Email
We will reply to you through your email address as soon as we receive your offer